The electro-optic imaging system has been used to observe the dynamics of photoconductive switching in GaAs. GaAs has two distinct regions of operation. At biases below 3-6 kV/cm (depending on material preparation) the switches behave in a simple fashion. The field collapses with the integral of the absorbed light and then recovers as the carriers recombine. Above 6 kV/cm the electric field across the switches exhibit transient anomalies. This technique could also be used for other semiconductor devices such as integrated circuits.


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    Titel :

    2-D electro-optic sampling in GaAs photoconductive switches


    Beteiligte:
    Donaldson, W. (Autor:in) / Mu, I. (Autor:in) / Jacobs-Perkins, D. (Autor:in) / Hsiang, T. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 2 ; 23-24 vol.2


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    182297 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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