AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.


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    Title :

    UVLED based on carrier localization in AlGaN


    Contributors:
    Collins, C.J. (author) / Sampath, A.V. (author) / Garrett, G.A. (author) / Shen, H. (author) / Wraback, M. (author) / Readinger, E. (author)


    Publication date :

    2005-01-01


    Size :

    957909 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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