AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.
UVLED based on carrier localization in AlGaN
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 150-152 Vol. 1
01.01.2005
957909 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
UVLED Based on Carrier Localization in AlGaN
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