AlGaN samples show intense room temperature photoluminescence from localized states that is significantly red-shifted, 200-400 meV, from band edge. Double-heterostructure light-emitting diodes were fabricated using this unique layer, with electroluminescence peak at 325 nm.


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    Titel :

    UVLED based on carrier localization in AlGaN


    Beteiligte:
    Collins, C.J. (Autor:in) / Sampath, A.V. (Autor:in) / Garrett, G.A. (Autor:in) / Shen, H. (Autor:in) / Wraback, M. (Autor:in) / Readinger, E. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    957909 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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