Summary form only given. We propose a new periodic structure for second-harmonic generation (SHG) where the linear and nonlinear susceptibilities are modulated at a period of one wavelength of the harmonic wave giving rise to several new types of phase matching. The SHG device consists of (111)GaP/AlP alternating layers where the layer thickness is chosen to be half the harmonic wavelength in the medium for the fundamental wavelength 1.064 /spl mu/m so that the index n and the nonlinearity d are modulated.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    New phase-matching scheme in second-harmonic generation using multilayered semiconductors


    Contributors:
    Ogasawara, N. (author) / Takeuchi, K. (author) / Chino, T. (author) / Miyamoto, M. (author)


    Publication date :

    1995-01-01


    Size :

    143999 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    New Phase-Matching Scheme in Second-Harmonic Generation Using Multilayered Semiconductors

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Achromatic phase matching for tunable second harmonic generation

    Richman, B.A. / Bisson, S.E. / Trebino, R. et al. | IEEE | 1997


    Achromatic phase matching for tunable second harmonic generation

    Richman, B.A. / Bisson, S.E. / Trebino, R. et al. | IEEE | 1997



    Second-Harmonic Generation in Semiconductors: Devices and Diagnostics

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996