Summary form only given. We propose a new periodic structure for second-harmonic generation (SHG) where the linear and nonlinear susceptibilities are modulated at a period of one wavelength of the harmonic wave giving rise to several new types of phase matching. The SHG device consists of (111)GaP/AlP alternating layers where the layer thickness is chosen to be half the harmonic wavelength in the medium for the fundamental wavelength 1.064 /spl mu/m so that the index n and the nonlinearity d are modulated.
New phase-matching scheme in second-harmonic generation using multilayered semiconductors
1995-01-01
143999 byte
Conference paper
Electronic Resource
English
New Phase-Matching Scheme in Second-Harmonic Generation Using Multilayered Semiconductors
British Library Conference Proceedings | 1995
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