Summary form only given. We propose a new periodic structure for second-harmonic generation (SHG) where the linear and nonlinear susceptibilities are modulated at a period of one wavelength of the harmonic wave giving rise to several new types of phase matching. The SHG device consists of (111)GaP/AlP alternating layers where the layer thickness is chosen to be half the harmonic wavelength in the medium for the fundamental wavelength 1.064 /spl mu/m so that the index n and the nonlinearity d are modulated.


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    Titel :

    New phase-matching scheme in second-harmonic generation using multilayered semiconductors


    Beteiligte:
    Ogasawara, N. (Autor:in) / Takeuchi, K. (Autor:in) / Chino, T. (Autor:in) / Miyamoto, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    143999 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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