The performance of 1300 nm uncooled FP devices based on compressive and tensile strained MQWs developed at Lasertron is reviewed. Results for 1550 nm FP lasers with compressively strained MQWs are also discussed. The possibility of designing this material system to fabricate DFB lasers with narrow spectral linewidth for long haul, high capacity and wide temperature range optical fiber communications is introduced. Up to date, conventional index and gain-coupled DFB laser structures are reviewed theoretically and experimentally in term of single mode yield and performances. Finally, we summarize the latest results of device characteristics and system performances based on Lasertron's AlGaInAs/InP strained MQW DFB lasers.
High performance AlGaInAs/InP strained MQW lasers for optical communication
1996-01-01
75942 byte
Conference paper
Electronic Resource
English
High Performance AlGaInAs/InP Strained MQW Lasers for Optical Communication
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