The laser structures investigated in this study are MQW structures that have been processed into ridge waveguide Fabry-Perot devices. We have characterized the AlGaInAs system in term of the transparency current density, effective diffusion length, internal absorption, loss and efficiency, and differential gain.


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    Title :

    Temperature performance of AlGaInAs semiconductor lasers


    Contributors:


    Publication date :

    2001-01-01


    Size :

    174570 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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