We observed distinct nonlinear behaviors of bandwidth degradation in low-temperature-grown-GaAs based traveling-wave-photodetectors under long wavelength (/spl sim/1300 nm) operation. The disclosed unique material properties of LTG-GaAs at different excitation wavelengths are important for its applications in ultrafast optoelectronic and understanding its carrier dynamics in the defect states.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (/spl sim/1.3 /spl mu/m)


    Contributors:


    Publication date :

    2003-01-01


    Size :

    83336 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (∼1.3mum)

    Shi, J.-W. / Gan, K.-G. / Bowers, J. E. et al. | British Library Conference Proceedings | 2003


    Ultra-wide-band long-wavelength photodetectors

    Kato, K. / Akatsu, Y. | British Library Online Contents | 1996


    Photoresponse of InGaAs/GaAs multiple-period very-long-wavelength quantum well infrared photodetectors

    Lu, X. Q. / Xiong, D. Y. / Tong, X. | British Library Online Contents | 2015


    20m Cutoff Long-Wavelength In~xGa~1~-~xAs/GaAs Quantum-Well Infrared Photodetectors

    Gunapala, S. D. / Bandara, K. M. S. V. / Levine, B. F. et al. | British Library Conference Proceedings | 1995