We observed distinct nonlinear behaviors of bandwidth degradation in low-temperature-grown-GaAs based traveling-wave-photodetectors under long wavelength (/spl sim/1300 nm) operation. The disclosed unique material properties of LTG-GaAs at different excitation wavelengths are important for its applications in ultrafast optoelectronic and understanding its carrier dynamics in the defect states.


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    Titel :

    Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength (/spl sim/1.3 /spl mu/m)


    Beteiligte:
    Jin-Wei Shi, (Autor:in) / Kian-Giap Gan, (Autor:in) / Bowers, J.E. (Autor:in) / Tzu-Ming Liu, (Autor:in) / Chi-Kuang Sun, (Autor:in) / Yi-Jen Chiu, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    83336 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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