All epitaxial fully planarized GaAs based semiconductor lasers are demonstrated using a selective Fermi-level pinning at a heterointerface. The results show that this method provides efficient self-aligned current- and mode-confinement and mode controllability by intracavity patterning.


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    Title :

    Fabrication of all-epitaxial semiconductor laser using selective interface fermi-level pinning


    Contributors:
    Ahn, J. (author) / Freisem, S. (author) / Lu, D. (author) / Gazula, D. (author) / Deppe, D.G. (author)


    Publication date :

    2005-01-01


    Size :

    1481906 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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