All epitaxial fully planarized GaAs based semiconductor lasers are demonstrated using a selective Fermi-level pinning at a heterointerface. The results show that this method provides efficient self-aligned current- and mode-confinement and mode controllability by intracavity patterning.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Fabrication of all-epitaxial semiconductor laser using selective interface fermi-level pinning


    Beteiligte:
    Ahn, J. (Autor:in) / Freisem, S. (Autor:in) / Lu, D. (Autor:in) / Gazula, D. (Autor:in) / Deppe, D.G. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    1481906 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Fermi-Level Pinning in GaInP/AIGaInP Laser Diodes

    Smowton, P.M. / Blood, P. | IEEE | 1998


    Multi Fermi level pinning at metal/Cu(InGa)(SeS)2 interfaces

    Dharmadasa, I.M. | Online Contents | 2008


    Multi Fermi level pinning at metal-Cu(InGa)(SeS)2 interfaces

    Dharmadasa, I.M. | Online Contents | 2008


    Pinning of the Fermi level in A^2B^6 semiconductors [3890-56]

    Babentsov, V. N. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999