All epitaxial fully planarized GaAs based semiconductor lasers are demonstrated using a selective Fermi-level pinning at a heterointerface. The results show that this method provides efficient self-aligned current- and mode-confinement and mode controllability by intracavity patterning.
Fabrication of all-epitaxial semiconductor laser using selective interface fermi-level pinning
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 565-567 Vol. 1
01.01.2005
1481906 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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