Infrared reflectance of GaN grown on sapphire by metalorganic vapour deposition has been studied theoretically/experimentally. Comprehensive theoretical calculations have been made and compared with experimental data, evidencing a good technique for characterising GaN epilayers.
Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapour deposition
2003-01-01
88726 byte
Conference paper
Electronic Resource
English
Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapour deposition
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