Infrared reflectance of GaN grown on sapphire by metalorganic vapour deposition has been studied theoretically/experimentally. Comprehensive theoretical calculations have been made and compared with experimental data, evidencing a good technique for characterising GaN epilayers.


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    Title :

    Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapour deposition


    Contributors:
    Feng, Z.C. (author) / Ferguson, I.T. (author) / Hou, Y.T. (author) / Tzuen Rong Yang, (author)


    Publication date :

    2003-01-01


    Size :

    88726 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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