Infrared reflectance of GaN grown on sapphire by metalorganic vapour deposition has been studied theoretically/experimentally. Comprehensive theoretical calculations have been made and compared with experimental data, evidencing a good technique for characterising GaN epilayers.
Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapour deposition
01.01.2003
88726 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapour deposition
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