Infrared reflectance of GaN grown on sapphire by metalorganic vapour deposition has been studied theoretically/experimentally. Comprehensive theoretical calculations have been made and compared with experimental data, evidencing a good technique for characterising GaN epilayers.


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    Titel :

    Infrared reflectance studies of GaN grown on sapphire by metalorganic chemical vapour deposition


    Beteiligte:
    Feng, Z.C. (Autor:in) / Ferguson, I.T. (Autor:in) / Hou, Y.T. (Autor:in) / Tzuen Rong Yang, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    88726 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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