Summary form only given. We have fabricated ultrafast photoconductive switches on a GaAs substrate using an atomic force microscope (AFM) based on anodic oxidation. We report the ultrafast photoconductive switches on a thin absorption layer of low-temperature-grown GaAs which is used to reduce the transit time of carriers.


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    Title :

    Ultrafast photoconductive switches on a thin absorption layer fabricated by using an atomic force microscope


    Contributors:
    Itatani, T. (author) / Eikkawa, H. (author) / Tanuma, Y. (author) / Matsumoto, K. (author) / Sugaya, T. (author) / Nakagawa, T. (author) / Sugiyama, Y. (author) / Yonei, K. (author)


    Publication date :

    1999-01-01


    Size :

    266691 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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