Summary form only given. We have fabricated ultrafast photoconductive switches on a GaAs substrate using an atomic force microscope (AFM) based on anodic oxidation. We report the ultrafast photoconductive switches on a thin absorption layer of low-temperature-grown GaAs which is used to reduce the transit time of carriers.
Ultrafast photoconductive switches on a thin absorption layer fabricated by using an atomic force microscope
01.01.1999
266691 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Ultrafast Photoconductive Switches with a Gap of 43 nm Fabricated by Atomic Force Microscope
British Library Conference Proceedings | 1997
|British Library Conference Proceedings | 1998
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