A triple-layer omni-directional reflector (ODR), which consists of a semiconductor, a transparent quarter-wavelength dielectric layer, and a metal layer, has high reflectivity at all angles of incidence when used as an internal ODR. In this paper, triple-layer ODRs are demonstrated that incorporate nanoporous SiO/sub 2/, a new low-refractive-index (low-n) material with refractive index /spl Lt/1.46. Internal reflectivity measurements, including the angular dependence of R, are presented. The angle-integrated TE/TM-averaged reflectivity of the triple-layer reflector using nanoporous SiO/sub 2/ is 99.4 %. This is the highest ever reported averaged reflectivity for an internal ODR. The mirror loss of the triple-layer ODR is a factor of 7 lower than the mirror loss of conventional metal reflectors. The results indicate the great potential of the ODR for light-emitting diodes with high light-extraction efficiency.


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    Title :

    Internal omni-directional reflector using a low refractive index material for light-emitting diodes


    Contributors:
    Xi, J.-Q. (author) / Ojha, M. (author) / Cho, W. (author) / Wetzel, C. (author) / Gessmann, T. (author) / Schubert, E.F. (author) / Plawsky, J.L. (author) / Gill, W.N. (author)


    Publication date :

    2005-01-01


    Size :

    1326299 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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