A triple-layer omni-directional reflector (ODR), which consists of a semiconductor, a transparent quarter-wavelength dielectric layer, and a metal layer, has high reflectivity at all angles of incidence when used as an internal ODR. In this paper, triple-layer ODRs are demonstrated that incorporate nanoporous SiO/sub 2/, a new low-refractive-index (low-n) material with refractive index /spl Lt/1.46. Internal reflectivity measurements, including the angular dependence of R, are presented. The angle-integrated TE/TM-averaged reflectivity of the triple-layer reflector using nanoporous SiO/sub 2/ is 99.4 %. This is the highest ever reported averaged reflectivity for an internal ODR. The mirror loss of the triple-layer ODR is a factor of 7 lower than the mirror loss of conventional metal reflectors. The results indicate the great potential of the ODR for light-emitting diodes with high light-extraction efficiency.


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    Titel :

    Internal omni-directional reflector using a low refractive index material for light-emitting diodes


    Beteiligte:
    Xi, J.-Q. (Autor:in) / Ojha, M. (Autor:in) / Cho, W. (Autor:in) / Wetzel, C. (Autor:in) / Gessmann, T. (Autor:in) / Schubert, E.F. (Autor:in) / Plawsky, J.L. (Autor:in) / Gill, W.N. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    1326299 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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