A high mirror reflectivity of 62% is obtained for InGaN/GaN lasers using a deeply etched semiconductor/air DBR structure. The optimum design for the DBR mirrors with tilted sidewalls differs from the conventional /spl lambda//(4n) design.


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    Title :

    GaN-based blue laser diodes with deeply etched high-reflectivity DBR mirrors


    Contributors:
    Saitoh, T. (author) / Kumagai, M. (author) / Wang, H. (author) / Tawara, T. (author) / Nishida, T. (author) / Akasaka, T. (author) / Kobayashi, N. (author)


    Publication date :

    2003-01-01


    Size :

    85059 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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