A high mirror reflectivity of 62% is obtained for InGaN/GaN lasers using a deeply etched semiconductor/air DBR structure. The optimum design for the DBR mirrors with tilted sidewalls differs from the conventional /spl lambda//(4n) design.
GaN-based blue laser diodes with deeply etched high-reflectivity DBR mirrors
01.01.2003
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Aufsatz (Konferenz)
Elektronische Ressource
Englisch
GaN-based blue laser diodes with deeply etched high-reflectivity DBR mirrors
British Library Conference Proceedings | 2003
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