InGaAsN QW active lasers have shown promise as the material of choice for the active region of 1300-nm GaAs-based VCSELs. One of the challenges of growing InGaAsN QW lasers by MOCVD is due to the difficulties in incorporating N into the InGaAs QW, while maintaining a high optical quality film. The low purity of the N-precursor used in MOCVD (U-Dimethylhydrazine) is suspected as a possible reason for the low optical quality of MOCVD-grown InGaAsN QWs. In our approach, U-Dimethylhydrazine and AsH/sub 3/ are utilized in the growth of our InGaAsN QW.


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    Title :

    High performance 1300-nm dilute-nitride quantum well lasers by MOCVD


    Contributors:
    Tansu, N. (author) / Mawst, L.J. (author)


    Publication date :

    2002-01-01


    Size :

    133279 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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