Optimizing the MOCVD growth of InGaAsN has yielded high performance 1.3 /spl mu/m-emitting lasers, displaying reduced temperature sensitivity compared with InP-based structures. Studies reveal the impact of nitrogen on the gain, carrier confinement, and laser characteristics.


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    Title :

    Characteristics of dilute-nitride quantum well lasers


    Contributors:
    Mawst, L.J. (author) / Yeh, J.-Y. (author) / Tansu, N. (author)


    Publication date :

    2005-01-01


    Size :

    1539459 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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