Optimizing the MOCVD growth of InGaAsN has yielded high performance 1.3 /spl mu/m-emitting lasers, displaying reduced temperature sensitivity compared with InP-based structures. Studies reveal the impact of nitrogen on the gain, carrier confinement, and laser characteristics.
Characteristics of dilute-nitride quantum well lasers
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 98-100 Vol. 1
2005-01-01
1539459 byte
Conference paper
Electronic Resource
English
Characteristics of Dilute Nitride Quantum Well Lasers
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