High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 /spl deg/C. High modulation bandwidth of 10.1 (8.8) GHz at 25 /spl deg/C (70 /spl deg/C) and bias current 6 mA are demonstrated.
High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP quantum wells vertical cavity surface emitting laser
2004-01-01
226977 byte
Conference paper
Electronic Resource
English
High Performance 1.27 mum InGaAs:Sb-GaAsP Quantum Wells Vertical Cavity Surface Emitting Laser
British Library Conference Proceedings | 2004
|British Library Online Contents | 2008
|Holographic vertical-cavity surface-emitting laser
IEEE | 1999
|