High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than -30% when the temperature raised from room temperature to 70 /spl deg/C. High modulation bandwidth of 10.1 (8.8) GHz at 25 /spl deg/C (70 /spl deg/C) and bias current 6 mA are demonstrated.


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    Titel :

    High performance 1.27 /spl mu/m InGaAs:Sb-GaAsP quantum wells vertical cavity surface emitting laser


    Beteiligte:
    Hao-Chung Kuo, (Autor:in) / Ya-Hsien Chang, (Autor:in) / Fang-I Lai, (Autor:in) / Po-Tsung Lee, (Autor:in) / Shing-Chung Wang, (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    226977 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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