A new high density, high performance 16-Mb Static Random Access Memory (SRAM) is being developed in a 0.15¿m CMOS RH15 technology for use in space and other strategic radiation hardened applications. The SRAM design is implemented in a 1.5 Volt, 0.15 micron and seven-layer metal CMOS technology. Using integrated process features and advanced design techniques, a small cell size of 9.3 ¿m2 was utilized while achieving a SEU radiation hardness of less than 1E-12 upsets/bit-day and a worst-case chip performance of less than 15ns access time.
A Radiation Hardened 16-Mb SRAM for Space Applications
2007-03-01
2113514 byte
Conference paper
Electronic Resource
English
Commercially fabricated radiation hardened 4Mbit SRAM
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|British Library Conference Proceedings | 2004
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