This paper presents results on the theory and performance of a new AlGaAs GRIN HEMT-compatible diode laser structure using MBE growth with plane-selective doping. In this unique new device family, growth of pn junctions between 2-D electron/hole gases allows structures with a HEMT driver as an integral part of the device. The extremely small junction capacitance, high mobility lasers should have wide bandwidth for optical interconnections on chips or for optical communication sources.<>
Sub-mA-threshold HEMT-compatible diode lasers
Proceedings of LEOS '93 ; 629-630
1993-01-01
142992 byte
Conference paper
Electronic Resource
English
Sub-mA-Threshold HEMT-Compatible Diode Lasers
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