This paper presents results on the theory and performance of a new AlGaAs GRIN HEMT-compatible diode laser structure using MBE growth with plane-selective doping. In this unique new device family, growth of pn junctions between 2-D electron/hole gases allows structures with a HEMT driver as an integral part of the device. The extremely small junction capacitance, high mobility lasers should have wide bandwidth for optical interconnections on chips or for optical communication sources.<>


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    Titel :

    Sub-mA-threshold HEMT-compatible diode lasers


    Beteiligte:
    Eliason, G.W. (Autor:in) / Plant, T.K. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    142992 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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