Summary form only given. In conclusion, threshold currents as low as 0.67 mA are obtained for impurity induced disordered (IID)-defined InGaAs DBR QW vertical cavity lasers (VCLs). The performance of IID-VCLs has been compared to air-gap apertured VCLs fabricated from adjacent material from the same wafer. SEM images of the active region and near-field EL measurements indicate that the Zn-IID has resulted in confinement of carriers in the lasers. Such confinement should enable the creation of smaller diameter VCLs in the future.


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    Title :

    Vertical cavity lasers with Zn impurity-induced disordering (IID) defined active regions


    Contributors:
    Floyd, P.D. (author) / Thibeault, B.J. (author) / Ko, J. (author) / Young, D.B. (author) / Coldren, L.A. (author) / Merz, J.L. (author)


    Publication date :

    1996-01-01


    Size :

    226106 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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