Summary form only given. In conclusion, threshold currents as low as 0.67 mA are obtained for impurity induced disordered (IID)-defined InGaAs DBR QW vertical cavity lasers (VCLs). The performance of IID-VCLs has been compared to air-gap apertured VCLs fabricated from adjacent material from the same wafer. SEM images of the active region and near-field EL measurements indicate that the Zn-IID has resulted in confinement of carriers in the lasers. Such confinement should enable the creation of smaller diameter VCLs in the future.
Vertical cavity lasers with Zn impurity-induced disordering (IID) defined active regions
01.01.1996
226106 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Vertical Cavity Lasers with Zn Impurity-Induced Disordering (IID) Defined Active Regions
British Library Conference Proceedings | 1996
|British Library Conference Proceedings | 2003
|Deep Levels Induced by Impurity Free Vacancy Disordering
IEEE | 1998
|