Summary form only given. In conclusion, threshold currents as low as 0.67 mA are obtained for impurity induced disordered (IID)-defined InGaAs DBR QW vertical cavity lasers (VCLs). The performance of IID-VCLs has been compared to air-gap apertured VCLs fabricated from adjacent material from the same wafer. SEM images of the active region and near-field EL measurements indicate that the Zn-IID has resulted in confinement of carriers in the lasers. Such confinement should enable the creation of smaller diameter VCLs in the future.


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    Titel :

    Vertical cavity lasers with Zn impurity-induced disordering (IID) defined active regions


    Beteiligte:
    Floyd, P.D. (Autor:in) / Thibeault, B.J. (Autor:in) / Ko, J. (Autor:in) / Young, D.B. (Autor:in) / Coldren, L.A. (Autor:in) / Merz, J.L. (Autor:in)


    Erscheinungsdatum :

    01.01.1996


    Format / Umfang :

    226106 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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