Lasing characteristics of MBE grown GaInAs/AlGaAs single QW lasers with double barrier tunnel injection structures are investigated. The I-L characteristics are strongly affected by the tunnel injection structure. A high characteristic temperature of 164K is obtained.
Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers
2005-01-01
163938 byte
Conference paper
Electronic Resource
English
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