Lasing characteristics of MBE grown GaInAs/AlGaAs single QW lasers with double barrier tunnel injection structures are investigated. The I-L characteristics are strongly affected by the tunnel injection structure. A high characteristic temperature of 164K is obtained.


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    Title :

    Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers


    Contributors:
    Ohta, M. (author) / Furuhata, T. (author) / Matsuura, T. (author) / Matsui, Y. (author) / Miyamoto, T. (author) / Koyama, F. (author)


    Publication date :

    2005-01-01


    Size :

    163938 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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