Lasing characteristics of MBE grown GaInAs/AlGaAs single QW lasers with double barrier tunnel injection structures are investigated. The I-L characteristics are strongly affected by the tunnel injection structure. A high characteristic temperature of 164K is obtained.
Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers
2005-01-01
163938 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1994
|High-Power GaInAs/GaInAsP/GalnP 980-nm Pump Lasers
British Library Conference Proceedings | 1993
|High-power GaInAs/GaInAsP/GaInP 980-nm pump lasers
IEEE | 1993
|