Lasing characteristics of MBE grown GaInAs/AlGaAs single QW lasers with double barrier tunnel injection structures are investigated. The I-L characteristics are strongly affected by the tunnel injection structure. A high characteristic temperature of 164K is obtained.
Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers
01.01.2005
163938 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
High-Power GaInAs/GaInAsP/GalnP 980-nm Pump Lasers
British Library Conference Proceedings | 1993
|British Library Conference Proceedings | 1994
|TuS2 1200 nm Highly Strained GaInAs/GaAs Surface Emitting Lasers
British Library Conference Proceedings | 2002
|