Lasing characteristics of MBE grown GaInAs/AlGaAs single QW lasers with double barrier tunnel injection structures are investigated. The I-L characteristics are strongly affected by the tunnel injection structure. A high characteristic temperature of 164K is obtained.


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    Titel :

    Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers


    Beteiligte:
    Ohta, M. (Autor:in) / Furuhata, T. (Autor:in) / Matsuura, T. (Autor:in) / Matsui, Y. (Autor:in) / Miyamoto, T. (Autor:in) / Koyama, F. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    163938 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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