In summary, a novel external-cavity tunable semiconductor quantum well laser is demonstrated. Diffraction-limited output powers up to 1.0 W CW have been achieved, and a tuning bandwidth of 200 nm has been accessed by interchanging gain elements within a common external cavity.<>


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    Title :

    High-power, diffraction-limited, external-cavity tunable diode lasers


    Contributors:
    Mehuys, D. (author) / Welch, D.F. (author) / Scifres, D.R. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    157540 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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