In summary, a novel external-cavity tunable semiconductor quantum well laser is demonstrated. Diffraction-limited output powers up to 1.0 W CW have been achieved, and a tuning bandwidth of 200 nm has been accessed by interchanging gain elements within a common external cavity.<>
High-power, diffraction-limited, external-cavity tunable diode lasers
Proceedings of LEOS '93 ; 598-599
1993-01-01
157540 byte
Conference paper
Electronic Resource
English
High-Power, Diffraction-Limited, External-Cavity Tunable Diode Lasers
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