In summary, a novel external-cavity tunable semiconductor quantum well laser is demonstrated. Diffraction-limited output powers up to 1.0 W CW have been achieved, and a tuning bandwidth of 200 nm has been accessed by interchanging gain elements within a common external cavity.<>


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-power, diffraction-limited, external-cavity tunable diode lasers


    Beteiligte:
    Mehuys, D. (Autor:in) / Welch, D.F. (Autor:in) / Scifres, D.R. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    157540 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    High-Power, Diffraction-Limited, External-Cavity Tunable Diode Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


    Widely tunable external cavity diode lasers (Invited Paper) [2378-03]

    Day, T. / Brownell, M. F. / Wu, I.-F. et al. | British Library Conference Proceedings | 1995


    External cavity diode lasers with E-beam written silicon diffraction gratings

    Mroziewicz, B. / Kowalczyk, E. / Dobrzanski, L. et al. | British Library Online Contents | 2007



    Communication with chaotic external cavity diode lasers

    Sivaprakasam, S. / Shore, K. A. | British Library Conference Proceedings | 2000