Summary form only given. All-optical methods can be very useful for transport measurements of excess carriers in semiconductor structures. Application of these methods becomes problematic, however, when diffusion lengths become shorter than the light wavelength. To overcome this limit, we have adapted near-field optical methods to investigate electron-hole diffusion and recombination InGaN and GaN QW light emitting heterostructures. One particular motivation was on establishing a correlation between the complex crystalline microstructure of the nonrandom InGaN alloy and the optimal QW design/growth parameters for laser devices.


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    Title :

    Determination of electron-hole transport in InGaN QW heterostructures by near-field optical microscopy


    Contributors:
    Vertikov, A. (author) / Ozden, I. (author) / Nurnikko, A.V. (author)


    Publication date :

    1999-01-01


    Size :

    303415 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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