Many fundamental optical properties of InGaN have not yet been fully understood. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InGaN compositional fluctuations. In this work, we have employed photoluminescence (PL), photoreflectance (PR), and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaN-GaN double heterostructures.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Optical properties of InGaN/GaN double heterostructures


    Contributors:
    Mee Yi Ryu, (author) / Eun-Joo Shin, (author) / Jae Ho Song, (author) / Sung Woong Park, (author) / Phil Won Yu, (author) / Nam Woong Song, (author) / Joo In Lee, (author) / Dongho Kim, (author) / Eun Soon Oh, (author) / Yong Jo Park, (author)


    Publication date :

    1999-01-01


    Size :

    132847 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





    Cavity-Free Lasing and 2D Plasma Oscillations in Optically Excited InGaN Heterostructures

    Bojarska, A. / Marona, L. / Czernecki, R. et al. | British Library Online Contents | 2014



    Optical properties of type-II InGaN/GaAsN/GaN quantum wells

    Park, S. H. / Lee, Y. T. / Park, J. | British Library Online Contents | 2009