It is shown that a homogeneous spin-polarized electron gas in semiconductor heterostructures can drive an electric current. Here we report on this spin-galvanic effect where the spin polarization has been achieved by optical orientation applying circularly polarized far-infrared laser radiation. The microscopic origin-of the effect is an inherent asymmetry of spin-flip scattering.


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    Title :

    Infrared spin orientation and spin-galvanic effect in semiconductor heterostructures


    Contributors:
    Ganichev, S.D. (author) / Prettl, W. (author)


    Publication date :

    2002-01-01


    Size :

    152590 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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