It is shown that a homogeneous spin-polarized electron gas in semiconductor heterostructures can drive an electric current. Here we report on this spin-galvanic effect where the spin polarization has been achieved by optical orientation applying circularly polarized far-infrared laser radiation. The microscopic origin-of the effect is an inherent asymmetry of spin-flip scattering.
Infrared spin orientation and spin-galvanic effect in semiconductor heterostructures
2002-01-01
152590 byte
Conference paper
Electronic Resource
English
Infrared Spin Orientation and Spin-Galvanic Effect in Semiconductor Heterostructures
British Library Conference Proceedings | 2002
|Spatiotemporal Near-Field Spin Microscopy in Digital Magnetic Heterostructures
British Library Conference Proceedings | 1996
|Attitude Orientation of Spin-Stabilized Space Vehicles
NTIS | 1965
|