It is shown that a homogeneous spin-polarized electron gas in semiconductor heterostructures can drive an electric current. Here we report on this spin-galvanic effect where the spin polarization has been achieved by optical orientation applying circularly polarized far-infrared laser radiation. The microscopic origin-of the effect is an inherent asymmetry of spin-flip scattering.


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    Titel :

    Infrared spin orientation and spin-galvanic effect in semiconductor heterostructures


    Beteiligte:
    Ganichev, S.D. (Autor:in) / Prettl, W. (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    152590 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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