It is shown that a homogeneous spin-polarized electron gas in semiconductor heterostructures can drive an electric current. Here we report on this spin-galvanic effect where the spin polarization has been achieved by optical orientation applying circularly polarized far-infrared laser radiation. The microscopic origin-of the effect is an inherent asymmetry of spin-flip scattering.
Infrared spin orientation and spin-galvanic effect in semiconductor heterostructures
01.01.2002
152590 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Infrared Spin Orientation and Spin-Galvanic Effect in Semiconductor Heterostructures
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