We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.


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    Title :

    Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers


    Contributors:


    Publication date :

    1996-01-01


    Size :

    175743 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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