We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.
Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers
1996-01-01
175743 byte
Conference paper
Electronic Resource
English
Analysis of Carrier Capture and Escape in InGaAsP/InP Quantum Well Lasers
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