We demonstrate that the combined effect of the space charge and 3D carrier reflections at quantum well boundaries plays a dominant role in determining the effective capture and escape times in InGaAsP-InP quantum well lasers.
Analysis of carrier capture and escape in InGaAsP-InP quantum well lasers
01.01.1996
175743 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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