A wideband preamplifier is designed and fabricated using a 0.18 /spl mu/m CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.


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    Title :

    A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections


    Contributors:
    Indal Song, (author) / Sang-Woo Seo, (author) / Seokhun Hyun, (author) / Daeik Kim, (author) / Sa Huang, (author) / Brooke, M. (author) / Jokerst, N.M. (author) / Brown, A. (author)


    Publication date :

    2004-01-01


    Size :

    104423 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004




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