A wideband preamplifier is designed and fabricated using a 0.18 /spl mu/m CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.
A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections
2004-01-01
104423 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 2004
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