A wideband preamplifier is designed and fabricated using a 0.18 /spl mu/m CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.


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    Titel :

    A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections


    Beteiligte:
    Indal Song, (Autor:in) / Sang-Woo Seo, (Autor:in) / Seokhun Hyun, (Autor:in) / Daeik Kim, (Autor:in) / Sa Huang, (Autor:in) / Brooke, M. (Autor:in) / Jokerst, N.M. (Autor:in) / Brown, A. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    104423 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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