A wideband preamplifier is designed and fabricated using a 0.18 /spl mu/m CMOS technology. The amplifier is heterogeneously integrated with a thin film InGaAs inverted MSM photodetector, and a successful demonstration at a bit rate of 10 Gbps is reported.
A 10 Gbit/s Si CMOS transimpedance amplifier with an integrated MSM photodetector for optical interconnections
01.01.2004
104423 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 2004
|British Library Conference Proceedings | 2004
British Library Online Contents | 2016
|BiCMOS variable gain transimpedance amplifier for automotive applications
Tema Archiv | 2008
|