We report on bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSELs) that are wafer bonded to AlGaAs substrates. We employ a simple low temperature wafer bonding process that uses inert N/sub 2/ gas during the bonding anneal rather than H/sub 2/.


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    Title :

    Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding


    Contributors:
    Choquette, K.D. (author) / Roberds, B. (author) / Geib, K.M. (author) / Hou, H.Q. (author) / Twesten, R.D. (author) / Lear, K.L. (author) / Hammons, B.E. (author)


    Publication date :

    1997-01-01


    Size :

    192038 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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