We report on bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSELs) that are wafer bonded to AlGaAs substrates. We employ a simple low temperature wafer bonding process that uses inert N/sub 2/ gas during the bonding anneal rather than H/sub 2/.
Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding
1997-01-01
192038 byte
Conference paper
Electronic Resource
English
Bottom-Emitting 850 nm Selectively Oxidized VCSELs Fabricated using Wafer Bonding
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