We report on bottom-emitting 850 nm selectively oxidized vertical cavity surface emitting lasers (VCSELs) that are wafer bonded to AlGaAs substrates. We employ a simple low temperature wafer bonding process that uses inert N/sub 2/ gas during the bonding anneal rather than H/sub 2/.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Bottom-emitting 850 nm selectively oxidized VCSELs fabricated using wafer bonding


    Beteiligte:
    Choquette, K.D. (Autor:in) / Roberds, B. (Autor:in) / Geib, K.M. (Autor:in) / Hou, H.Q. (Autor:in) / Twesten, R.D. (Autor:in) / Lear, K.L. (Autor:in) / Hammons, B.E. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    192038 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Bottom-Emitting 850 nm Selectively Oxidized VCSELs Fabricated using Wafer Bonding

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Selectively oxidized VCSELs go single-mode

    Choquette, K. D. | British Library Online Contents | 2000


    Properties of small-aperture selectively oxidized VCSELs

    Choquette, K.D. / Chow, W.W. / Hadley, G.R. et al. | IEEE | 1996


    Properties of Small-Aperture Selectively Oxidized VCSELs

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    Improved performance of selectively oxidized visible VCSELs

    Choquette, K.D. / Hafich, M.J. / Crawford, M.H. et al. | IEEE | 1999