We have observed, single mode lasing at 766 nm in vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy. This could play an important role in the development of cost-effective and accurate oxygen sensor.


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    Title :

    Vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy


    Contributors:
    Leinonen, P. (author) / Leinonen, T. (author) / Viheriala, J. (author) / Pessa, M. (author) / Kim, Y.K. (author) / Young, E.W. (author) / Choquette, K.D. (author)


    Publication date :

    2003-01-01


    Size :

    77382 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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