We have observed, single mode lasing at 766 nm in vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy. This could play an important role in the development of cost-effective and accurate oxygen sensor.
Vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy
2003-01-01
77382 byte
Conference paper
Electronic Resource
English
Wafer-bonded AlGaInAs 1.3-m vertical-cavity surface-emitting lasers [3003-21]
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