We have observed, single mode lasing at 766 nm in vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy. This could play an important role in the development of cost-effective and accurate oxygen sensor.


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    Titel :

    Vertical cavity surface emitting lasers with AlGaInAs/AlGaAs quantum wells grown by molecular beam epitaxy


    Beteiligte:
    Leinonen, P. (Autor:in) / Leinonen, T. (Autor:in) / Viheriala, J. (Autor:in) / Pessa, M. (Autor:in) / Kim, Y.K. (Autor:in) / Young, E.W. (Autor:in) / Choquette, K.D. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    77382 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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