In the present paper, we describe pulse generation by a monolithic semiconductor MLL (M-MLL). In this case, the change of the absorber strength by the absorber voltage offers another way for the reduction of the spectral width and thus the reduction of phase noise. The investigated pulse source is a multi-section buried heterostructure laser having an active and a passive part.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Low noise 400 fs pulse generation by monolithic semiconductor mode-locked laser and soliton pulse compression


    Contributors:
    Kroh, M. (author) / Huttl, B. (author) / Ferber, S. (author) / Weber, H.-G. (author)


    Publication date :

    2005-01-01


    Size :

    906236 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Monolithic additive pulse mode-locked quantum well laser

    Chen, Y.K. / Wu, M.C. / Tanbun-Ek, T. et al. | IEEE | 1992


    Monolithic Additive Pulse Mode-Locked Quantum Well Laser

    Chen, Y. K. / Wu, M. C. / Tanbun-Ek, T. et al. | British Library Conference Proceedings | 1992


    Monolithic Multisegment Mode Locked DBR Laser for Wavelength Tunable Picosecond Pulse Generation

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996



    Generation and stabilization of ultrafast optical pulse trains with monolithic mode-locked laser diodes

    Arahira, S. / Katoh, Y. / Ogawa, Y. | British Library Online Contents | 2001