We demonstrate experimentally optical bistability inside a two-bus ring resonator fabricated in silicon-on-insulator with a power of only 680 /spl mu/W. We have analysed the different contributions leading to this bistable behaviour and show that the dominant nonlinear effects are free carrier based.


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    Title :

    Optical bistability analysis inside a two-bus ring resonator


    Contributors:
    Priem, G. (author) / Dumon, P. (author) / Bogaerts, W. (author) / Van Thourhout, D. (author) / Morthier, G. (author) / Baets, R. (author)


    Publication date :

    2005-01-01


    Size :

    144940 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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