Improved trench N-channel power MOSFETs from STMicroelectronics are tailored for rugged FBSOA applications where high-power levels in high drain-source voltage (VDS) drop are required. This advanced trench technology provides an outstanding performance in terms of high VDS and drain current (ID) working conditions; high surge current capability; linear mode operation robustness; low on-resistance $(\mathbf{R}_{\mathbf{DSon}})$ in fully on-condition.


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    Title :

    Wide SOA MOSFET technology for hot swap and inrush current limiter solutions


    Contributors:


    Publication date :

    2021-11-17


    Size :

    2074011 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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