Improved trench N-channel power MOSFETs from STMicroelectronics are tailored for rugged FBSOA applications where high-power levels in high drain-source voltage (VDS) drop are required. This advanced trench technology provides an outstanding performance in terms of high VDS and drain current (ID) working conditions; high surge current capability; linear mode operation robustness; low on-resistance $(\mathbf{R}_{\mathbf{DSon}})$ in fully on-condition.
Wide SOA MOSFET technology for hot swap and inrush current limiter solutions
17.11.2021
2074011 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
NTRS | 1977
|Inrush-Current Limiter And Bus Isolator
NTRS | 1994
|Inrush-Current Limiter and Bus Isolator
Online Contents | 1994