We present all-monolithic, single-step grown, room-temperature, electrically-pumped vertical cavity lasers at 1.55 /spl mu/m based on III-As compounds, with threshold current density of 570A/cm/sup 2/, differential quantum efficiency greater than 50% and threshold voltage of 3V. We employed three active regions, epitaxially stacked in series with Esaki-junctions to increase the gain and the differential efficiency.
Room-temperature, electrically-pumped, multiple-active-region VCSELs with high differential efficiency at 1.55 /spl mu/m
1999-01-01
150874 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1999
|British Library Online Contents | 2011
Design of an InGaAs/InP 1.55 ?m electrically pumped VCSEL
British Library Online Contents | 2008
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