We present all-monolithic, single-step grown, room-temperature, electrically-pumped vertical cavity lasers at 1.55 /spl mu/m based on III-As compounds, with threshold current density of 570A/cm/sup 2/, differential quantum efficiency greater than 50% and threshold voltage of 3V. We employed three active regions, epitaxially stacked in series with Esaki-junctions to increase the gain and the differential efficiency.


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    Titel :

    Room-temperature, electrically-pumped, multiple-active-region VCSELs with high differential efficiency at 1.55 /spl mu/m


    Beteiligte:
    Kim, J.K. (Autor:in) / Hall, E. (Autor:in) / Sjolund, O. (Autor:in) / Coldren, L.A. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    150874 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch






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